Estudo da viabilidade técnica da mobilidade do semicondutor 6H-SiC para aplicação na indústria de semicondutores

Abstract

In this work we study the mobility of the 6H-SiC semiconductor, which is of great technological interest today. 6H-SiC has several commercial uses. Numerous applications have been proposed based on their opto-electronic properties, such as: high temperature electronics, microstructures, opto-electronic devices, high power and high frequency devices, rigid radiation electronics, ultraviolet detectors, solar cells, emitting diodes of light, etc. In this work, the drift speed, displacement and mobility of load carriers in the 6H-SiC semiconductor were theoretically deduced. The characterization and knowledge of these properties are extremely important for the manufacture of electronic components by the semiconductor industry. For the study carried out here, a semi-classical equation based on Newton's second law was used. The application took place in the semiconductor 6H-SiC doped type n taking into account variations of the ambient temperature and the electric field applied in the semiconductor. The main result obtained is that the electronic mobility is greater when the electric field is applied in the direction perpendicular to the c axis of the 6H-SiC semiconductor crystalline network. It was also obtained that mobility decreases with increasing temperature in a well-defined manner. This reduction in mobility with temperature provides the possibility of building a thermometer based on this relationship between electronic mobility and temperature